Studies on Niobium Pentoxide and Tantalum Pentoxide
نویسندگان
چکیده
منابع مشابه
Waveguide lasers in ytterbium-doped tantalum pentoxide on silicon.
A waveguide laser in an ytterbium-doped tantalum pentoxide film is reported. The waveguide is formed of a rib of sputtered tantalum pentoxide on top of oxidized silicon with an over-cladding of silica. Emission at a wavelength of 1025 nm was achieved with an absorbed pump power threshold and slope efficiency of ≈29 mW and 27%, respectively, for a cavity formed by a high reflector mirror and an...
متن کاملEvanescent field Sensors Based on Tantalum Pentoxide Waveguides – A Review
Evanescent field sensors based on waveguide surfaces play an important rolewhere high sensitivity is required. Particularly tantalum pentoxide (Ta₂O₅) is a suitablematerial for thin-film waveguides due to its high refractive index and low attenuation.Many label-free biosensor systems such as grating couplers and interferometric sensors aswell as fluorescence-based systems benefit from this wave...
متن کاملSpectroscopy of ytterbium-doped tantalum pentoxide rib waveguides on silicon
The design, fabrication and spectroscopic characterization of ytterbium-doped Ta2O5 rib waveguide are described. The waveguides are fabricated on silicon substrates and operate in a single mode at wavelengths above 970 nm. The peak absorption cross-section was measured to be 2.75 × 10 cm at 975 nm. The emission spectrum was found to have a broad fluorescence spanning from 990 nm to 1090 nm with...
متن کاملFirst principles study of oxygen vacancy defects in tantalum pentoxide
First principles total energy calculations were performed to characterize oxygen vacancy defects in tantalum pentoxide (Ta2O5). A simplified version of the crystalline orthorhombic phase of Ta2O5 was used in this study. Results indicate that O vacancies in Ta2O5 can be broadly classified based on their location in the lattice. One type of vacancy that occupies the ‘‘in-plane’’ sites displays de...
متن کاملRoles of niobium pentoxide, vanadium pentoxide and titanium dioxide in the grain growth and sintering of uranium dioxide
Pure uo2 sinters readily at temperatures below 1600°c when non-stoichiometric oxygen introduced during the presintering treatment is available for diffusion and subsequent densification. In the absence of excess oxygen sintering occurs at temperatures above 1600°C by self-diffusion of stoichiometric oxygen in uo2 • Grain growth occurs when open porosity has been eliminated and is controlled by ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Mining and Metallurgical Institute of Japan
سال: 1965
ISSN: 0369-4194,2185-6729
DOI: 10.2473/shigentosozai1953.81.920_30